Unity Semiconductor Corporation

Sandisk Corporation

Micron Technology Incorporated

Sunrise Memory Corporation

Other

Sundisk Corporation

Western Digital Corporation

Iii Holdings 1, LLC

Micron Quantum Devices Inc.

Gallitzin Allegheny LLC

Round Rock Research, LLC

Advanced Micro Devices Corporation

Sandisk Technologies Inc.

Silicon Image Gmbh

Zilog, Inc.

Robert D Norman

Eli Harari

Sanjay Mehrotra

Christophe J Chevallier

Vinod C Lakhani

Anil K Gupta

Robert F Wallace

Khandker N Quader

John S Mangan

Jeffrey G Craig

Jeffrey Donald Stai

Daniel C Guterman

Sayeef Salahuddin

Karl M J Lofgren

Daniel L Auclair

Frank Sai-Keung Lee

Richard S Chernicoff

Dominik J Schmidt

Karl M Lofgren

Mehrdad Mofidi

Gregory B Thelin

Youn Cheul Kim

Christopher John Petti

Scott Brad Herner

Siu Lung Chan

Tianhong Yan

Stephen Jeffrey Gross

Richard Albert

Om P Agrawal

Darrell Rinerson

Steven W Longcor

Edmond R Ward

Darrell D Rinerson

Sai-Keung Lee

Darrell D Binerson

Katrice Norman

A first circuit formed on a first semiconductor substrate is wafer-bonded to a second circuit formed on a second memory circuit, wherein the first circuit includes quasi-volatile or non-volatile memory circuits and wherein the second memory circuit includes fast memory circuits that have lower read latencies than the quasi-volatile or non-volatile memory circuits, as well as logic circuits. The volatile and non-volatile memory circuits may include static random-access memory (SRAM) circuits, dynamic random-access memory (DRAM) circuits, embedded DRAM (eDRAM) circuits, magnetic random-access memory (MRAM) circuits, embedded MRAM (eMRAM), or any suitable combination of these circuits.

High capacity memory circuit with low effective latency

An electronic device with embedded access to a high-bandwidth, high-capacity fast-access memory includes (a) a memory circuit fabricated on a first semiconductor die, wherein the memory circuit includes numerous modular memory units, each modular memory unit having (i) a three-dimensional array of storage transistors, and (ii) a group of conductors exposed to a surface of the first semiconductor die, the group of conductors being configured for communicating control, address and data signals associated the memory unit; and (b) a logic circuit fabricated on a second semiconductor die, wherein the logic circuit also includes conductors each exposed at a surface of the second semiconductor die, wherein the first and second semiconductor dies are wafer-bonded, such that the conductors exposed at the surface of the first semiconductor die are each electrically connected to a corresponding one of the conductors exposed to the surface of the second semiconductor die. The three-dimensional array of storage transistors may be formed by NOR memory strings.

Device with embedded high-bandwidth, high-capacity memory using wafer bonding

A quasi-volatile memory (QV memory) stack includes at least one semiconductor die, having formed thereon QV memory circuits, bonded to a second semiconductor on which a memory controller for the QV memory ('QV memory controller') is formed. The circuits in the bonded semiconductor dies are electrically connected using numerous copper interconnect conductors and conductive through-silicon vias (TSVs). The QV memory controller may include one or more interfaces to additional devices (“back-channel devices”) to enable the QV memory controller to also serve as a controller for each back-channel device and to provide additional services. The QV memory controller performs data transfers between a back-channel device and the QV memory without intervention by the host CPU.

Quasi-volatile memory device with a back-channel usage

A memory structure including three-dimensional NOR memory strings and method of fabrication is disclosed. In one embodiment, a memory system includes a set of memory modules of quasi-volatile memory circuits interconnected to a memory controller and having a set of memory ports. The memory system includes a first processor port, a second processor port, and one or more DIMM interface ports to be coupled to respective processors for providing access to the set of memory modules. In another embodiment, an artificial intelligence (AI) computing system includes a set of memory modules of quasi-volatile memory circuits interconnected to a memory controller and an arithmetic function block performing multiply and accumulate functionalities using data stored in the memory modules. The set of memory modules are accessed to perform read, write and erase memory operations in a rotating manner in each computing cycle.

Memory centric computational memory system

A high-capacity system memory may be built from both quasi-volatile (QV) memory circuits, logic circuits, and static random-access memory (SRAM) circuits. Using the SRAM circuits as buffers or cache for the QV memory circuits, the system memory may achieve access latency performance of the SRAM circuits and may be used as code memory. The system memory is also capable of direct memory access (DMA) operations and includes an arithmetic logic unit for performing computational memory tasks. The system memory may include one or more embedded processor. In addition, the system memory may be configured for multi-channel memory accesses by multiple host processors over multiple host ports. The system memory may be provided in the dual-in-line memory module (DIMM) format.

Quasi-volatile system-level memory

Memory device including modular memory units and modular circuit units for concurrent memory operations

Semiconductor memory systems and architectures for shared memory access implements memory-centric structures using a quasi-volatile memory. In one embodiment, a memory processor array includes an array of memory cubes, each memory cube in communication with a processor mini core to form a computational memory. In another embodiment, a memory system includes processing units and one or more mini core-memory module both in communication with a memory management unit. Mini processor cores in each mini core-memory module execute tasks designated to the mini core-memory module by a given processing unit using data stored in the associated quasi-volatile memory circuits of the mini core-memory module.

Memory centric system incorporating computational memory

A shared memory provides multi-channel access from multiple computing or host devices. A priority circuit prioritizes the multiple memory requests that are submitted as bids from the multiple host channels, such that those memory access requests that do not give rise to a conflict may proceed in parallel. The shared memory may be multi-ported and a routing circuit routes the prioritized memory access request to the appropriate memory ports where the allowed memory access requests may be carried out.

Channel controller for shared memory access

A memory device includes a first semiconductor wafer portion including two or more adjacent quasi-volatile memory circuits formed on a common semiconductor substrate where each quasi-volatile memory circuit being isolated from an adjacent quasi-volatile memory circuit by scribe lines; and a second semiconductor wafer portion including at least one memory controller circuit formed on a semiconductor substrate. The memory controller circuit includes logic circuits and interface circuits. The memory controller circuit is interconnected to the two or more adjacent quasi-volatile memory circuits of the first semiconductor wafer portion through interconnect structures and the memory controller circuit operates the two or more quasi-volatile memory circuits as one or more quasi-volatile memories.

High capacity memory module including wafer-section memory circuit

Growing community of inventors

Pendleton, OR, United States of America

Robert D Norman