San Diego, CA, United States of America

Robert Bernard Welstand

This inventor holds 30 USPTO granted patents and 3 published patent applications and 1 EPO patent, primarily in MOSFET Linearity. Top assignees: Psemi Corporation, Peregrine Semiconductor Corporation, Applied Micro Circuits Corporation. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert Bernard Welstand. Retrieved from https://idiyas.com/inventor/robert-bernard-welstand

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 93.3

 

Average Co-Inventor Count = 3.6

ph-index = 10

Forward Citations = 722(Granted Patents)


Company Filing History:


Years Active: 2002-2026

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Areas of Expertise:
Gate Oxide Reliability
MOSFET Linearity
Differential Trans-Impedance Amplifier
Optical Phase Shifter
Electro-Optic Phase Shifter
Copper Fill
Flip-Chip Interface
Microwave Frequency
Millimeter Wave
Accumulated Charge Sink
30 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Robert Bernard Welstand in MOSFET Technology

Introduction

Robert Bernard Welstand, based in San Diego, California, has made significant contributions to the field of semiconductor technology, particularly in the design and improvement of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). With a remarkable portfolio of 29 patents, Welstand has pioneered methods that enhance the performance characteristics of these critical electronic components.

Latest Patents

Among his most recent patents is a groundbreaking invention titled “Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink.” This innovation focuses on refining the linearity characteristics of MOSFET devices by controlling the accumulated charge in Silicon-On-Insulator (SOI) MOSFETs. By implementing an Accumulated Charge Sink (ACS), this method effectively reduces nonlinearity caused by parasitic capacitance, leading to enhanced performance in RF switch circuits. Another noteworthy patent is “Method and apparatus improving gate oxide reliability by controlling accumulated charge,” which addresses the reliability of gate oxide in SOI MOSFET devices. This invention utilizes accumulated charge control techniques to mitigate time-dependent dielectric breakdown (TDDB), thereby improving the longevity and reliability of MOSFETs.

Career Highlights

Welstand's impressive career includes key roles at Psemi Corporation and Peregrine Semiconductor Corporation. His work at these companies has focused on advancing semiconductor technology, particularly in developing innovative solutions that address common challenges in the industry. His expertise in MOSFET design has positioned him as a valuable asset in the engineering community.

Collaborations

Throughout his career, Welstand has collaborated with notable colleagues, including Christopher Nelles Brindle and Michael Andrew Stuber. These collaborative efforts have fostered an environment of innovation and creativity, contributing to the development of cutting-edge technologies in the semiconductor sector.

Conclusion

Robert Bernard Welstand exemplifies the spirit of innovation in the semiconductor industry. Through his extensive patent portfolio and collaborative efforts, he has significantly advanced the capabilities and reliability of MOSFET technology. His work continues to influence the design and application of electronic components, ensuring improved performance and reliability in various applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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