The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2021

Filed:

Oct. 24, 2019
Applicant:

Veo, Inc., San Diego, CA (US);

Inventors:

Rajat Sharma, San Diego, CA (US);

Chen-Kuo Sun, Escondido, CA (US);

Robert B. Welstand, San Diego, CA (US);

Assignee:

VEO, INC., San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02F 1/035 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/035 (2013.01); G02F 2203/20 (2013.01); G02F 2203/50 (2013.01);
Abstract

An EO phase shifter for modulating an electrical signal onto an optical wave is manufactured using CMOS process tools whereby a waveguide core made of EO material has intimate contacts with its electrodes. Specifically, the waveguide core is made of a Silicon-Rich Silicon Nitride (SRN) material which has a high linear refractive index n and a high third order nonlinear susceptibility. The electrodes are made of P or N doped silicon. Also, polarization of the optical wave is oriented normal to interfaces between the waveguide core and the electrodes. With this combination, the EO phase shifter exhibits high optical confinement, low propagation loss, and a high electro-optic overlap integral for modulation.


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