Halfmoon, NY, United States of America

Richard Glen Southwick, Iii


Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2017-2021

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):

Title: The Innovative Contributions of Richard Glen Southwick, III

Introduction

Richard Glen Southwick, III is a notable inventor based in Halfmoon, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on advanced transistor designs and measurement techniques that enhance the performance of semiconductor devices.

Latest Patents

Among his latest patents is the "Vertical field effect transistor and method of manufacturing a vertical field effect transistor." This patent describes a method for forming vertical transport field-effect transistors (VFETs) by etching vertical fin channels into a substrate. The process includes the formation of a bottom source/drain electrode and a gate dielectric layer, culminating in a top source/drain electrode positioned above the vertical fin channels. Another significant patent is "Measurement of top contact resistance in vertical field-effect transistor devices." This invention provides semiconductor device structures and techniques for measuring contact resistance, which is crucial for optimizing device performance.

Career Highlights

Richard is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the semiconductor field. His work at IBM has allowed him to contribute to cutting-edge technologies that are essential for modern electronic devices.

Collaborations

Throughout his career, Richard has collaborated with talented individuals such as Choonghyun Lee and Hemanth Jagannathan. These collaborations have fostered a creative environment that encourages the

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