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For the Inventor, By the Inventor

Nampa, ID, United States of America

Richard C Hawthorne

USPTO Granted Patents = 14

Average Co-Inventor Count = 2.9

ph-index = 8

Forward Citations = 208(Granted Patents)


Location History:

  • late of Nampa, ID (US) (2001)
  • Nampa, ID (US) (1993 - 2002)

Company Filing History:

goldMedal13 out of 37,950 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 156 
 
Micron Semiconductor, Inc.
 patents

Years Active: 1993-2002

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14 patents (USPTO):Explore Patents
1. 6432841 - Method for forming a dielectric (2002-08-13),
2. 6399504 - Methods and etchants for etching oxides of silicon with low selectivity (2002-06-04),
3. 6235145 - System for wafer cleaning (2001-05-22),
4. 6210489 - Methods and etchants for etching oxides of silicon with low selectivity (2001-04-03),
5. 6207587 - Method for forming a dielectric (2001-03-27),
6. 6029680 - Method for in situ removal of particulate residues resulting from (2000-02-29),
7. 6010949 - Method for removing silicon nitride in the fabrication of semiconductor (2000-01-04),
8. 5990019 - Selective etching of oxides (1999-11-23),
9. 5928969 - Method for controlled selective polysilicon etching (1999-07-27),
10. 5785875 - Photoresist removal process using heated solvent vapor (1998-07-28),
11. 5770263 - Method for in situ removal of particulate residues resulting from (1998-06-23),
12. 5749975 - Process for dry cleaning wafer surfaces using a surface diffusion layer (1998-05-12),
13. 5716535 - Methods and etchants for etching oxides of silicon with low selectivity (1998-02-10),
14. 5264396 - Method for enhancing nitridation and oxidation growth by introducing (1993-11-23),

Title: The Innovative Contributions of Richard C. Hawthorne

Introduction

Richard C. Hawthorne is a notable inventor based in Nampa, Idaho, recognized for his significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, he has made substantial advancements in methods related to dielectrics and etching processes.

Latest Patents

Hawthorne's latest patents include a method for forming a dielectric, which involves contacting a suitable substrate with a gas mixture containing atomic nitrogen and nitric oxide. This process is conducted at specific pressure and temperature conditions to ensure effective dielectric layer formation. Another significant patent focuses on methods and etchants for etching oxides of silicon with low selectivity. This innovative approach allows for thorough cleaning of surfaces with exposed doped silicon dioxide while minimizing the removal of the material itself. Preferred cleaning solutions detailed in his patents include specific ratios of ammonium fluoride, hydrogen fluoride, and ammonium hydroxide mixed with water.

Career Highlights

Throughout his career, Richard C. Hawthorne has worked with prominent companies in the semiconductor industry, including Micron Technology Incorporated and Micron Semiconductor, Inc. His work has been instrumental in developing technologies that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Hawthorne has collaborated with notable colleagues such as Li Li and Whonchee Lee, contributing to various projects that have advanced the field of semiconductor technology.

Conclusion

Richard C. Hawthorne's innovative work and numerous patents have significantly impacted the semiconductor industry. His contributions continue to influence advancements in technology and manufacturing processes.

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