The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2001

Filed:

Jul. 20, 1998
Applicant:
Inventors:

Li Li, Meridian, ID (US);

Donald L. Westmoreland, Boise, ID (US);

Richard C. Hawthorne, late of Nampa, ID (US);

Kevin Torek, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23F 1/02 ; H01L 2/13065 ;
U.S. Cl.
CPC ...
C23F 1/02 ; H01L 2/13065 ;
Abstract

A method of cleaning wafer surfaces includes providing a wafer surface and cleaning the wafer surface using at least hydrofluoric acid (HF) and an etch reducing component. The etch reducing component is from the group of (R),NOH wherein R═(C,-C,)alkyls, either straight or branch chained, and further wherein each R is independently a (C,-C,)alkyl, preferably a (C,-C,)alkyl, and more preferably one of tetra ethyl ammonium hydroxide (TEAH) and tetra methyl ammonium hydroxide (TMAH). A cleaning solution for use in cleaning a wafer surface includes an H,O diluted HF solution and an etch reducing component from the group above, preferably, TMAH. A system for performing an HF vapor cleaning process includes a vapor chamber for positioning a wafer having a wafer surface and means for providing an HF vapor to the vapor chamber. The HF vapor includes an inert carrier gas, an HF component, one of a water vapor or an alcohol vapor, and an etch reducing component. The etch reducing component may be from the group above, preferably, TMAH.


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