The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Feb. 13, 1996
Micron Technology, Inc., Boise, ID (US);
Abstract
Disclosed is a method for the removal of a layer of photoresist material from a surface of a film located on an in-process integrated circuit wafer subsequent to etching the film through the photoresist material layer. The method disclosed herein comprises first, applying a layer of the photoresist material layer over the film, then patterning the photoresist material, etching the film, and finally, removing the photoresist material. The etch is preferably a wet etch conducted in a closed reaction chamber. The photoresist material removal can be conducted within the same closed reaction chamber as that in which the etch was conducted. Photoresist material removal is achieved by exposing the photoresist material to heated solvent vapors. One particularly advantageous vapor solvent comprises isopropyl alcohol. Subsequent to the photoresist material removal, the film is preferably subjected to cleaning, rinsing, and drying methods, all of which can be conducted within the same closed reaction chamber.