The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Oct. 21, 1996
Li Li, Meridian, ID (US);
Zhiqiang Wu, Meridian, ID (US);
Richard C Hawthorne, Nampa, ID (US);
Elvia M Hawthorne, Nampa, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method for use in the fabrication of semiconductor devices in accordance with the present invention includes providing a silicon nitride region and oxidizing a region of material in proximity to the silicon nitride region. The silicon nitride region is then hydrogenated and thereafter, the hydrogenated silicon nitride region is removed. The hydrogenation step may include immersing the silicon nitride region into pressurized boiling water and/or treating the silicon nitride region with pressurized water vapor and the removing step includes removing the hydrogenated silicon nitride region with hot phosphoric acid. The method may be used in a local oxidation of silicon process. Further, the oxidation of the material and the hydrogenation of the silicon nitride may be performed in the same pressurizable unit.