Ray J Beffa

This inventor holds 29 USPTO granted patents, primarily in Memory Device Testing. Top assignee: Micron Technology Incorporated. Active years: 1997-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ray J Beffa. Retrieved from https://idiyas.com/inventor/ray-j-beffa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29

% Patents Active = 86.2

Average Co-Inventor Count = 1.8

ph-index = 14

Forward Citations = 559(Granted Patents)

Location History:

Boise, ID (US) (1997 - 2006)
Star, ID (US) (2005 - 2006)

Company Filing History:

29 out of 39,222

Micron Technology Incorporated

patents

Years Active: 1997-2006

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Areas of Expertise:

Integrated Circuit

Memory Device

Defect Detection

Data Compression

DRAM Cells

Anti-Fuse Repair

Wafer Level Burn-In

Self-Test Circuit

Testing Method

Dielectric Defects

Intercell Defects

Repair Optimization

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7120073 - Integrated circuit devices having reducing variable retention characteristics (2006-10-10),

2. 7069484 - System for optimizing anti-fuse repair time using fuse id (2006-06-27),

3. RE38956 - Data compression circuit and method for testing memory devices (2006-01-30),

4. 6898138 - Method of reducing variable retention characteristics in DRAM cells (2005-05-24),

5. 6625073 - Apparatus and method for testing for defects between memory cells in packaged semiconductor memory devices (2003-09-23),

6. 6622270 - System for optimizing anti-fuse repair time using fuse ID (2003-09-16),

7. 6477662 - Apparatus and method implementing repairs on a memory device (2002-11-05),

8. 6442719 - Method and apparatus for detecting intercell defects in a memory device (2002-08-27),

9. 6347386 - System for optimizing the testing and repair time of a defective integrated circuit (2002-02-12),

10. 6233185 - Wafer level burn-in of memory integrated circuits (2001-05-15),

11. 6181154 - Method and apparatus for testing of dielectric defects in a packaged semiconductor memory device (2001-01-30),

12. 6145092 - Apparatus and method implementing repairs on a memory device (2000-11-07),

13. 6128756 - System for optimizing the testing and repair time of a defective (2000-10-03),

14. 6119251 - Self-test of a memory device (2000-09-12),

15. 6094734 - Test arrangement for memory devices using a dynamic row for creating (2000-07-25),

Title: Ray J Beffa: Pioneering Inventor in Integrated Circuits

Introduction:

Ray J Beffa, a distinguished inventor based in Boise, ID, has made significant contributions to the field of integrated circuits. Boasting an impressive portfolio of 29 patents, Beffa's innovative work has revolutionized the semiconductor industry.

Latest Patents:

1. Integrated circuit devices having reducing variable retention characteristics: Beffa's patented process enhances the retention time of integrated circuit devices by subjecting them to specific conditions, improving their overall performance.

2. System for optimizing anti-fuse repair time using fuse id: This patent outlines a method for testing and repairing semiconductor memory chips efficiently, ensuring optimal functionality.

Career Highlights:

Ray J Beffa is a key figure at Micron Technology Incorporated, a leading player in the semiconductor market. His expertise and groundbreaking inventions have propelled Micron to the forefront of technological innovation.

Collaborations:

During his tenure at Micron, Beffa has collaborated closely with industry experts such as Warren M Farnworth and Eugene H Cloud. Together, they have pushed the boundaries of integrated circuit design and functionality.

Conclusion:

In conclusion, Ray J Beffa stands out as a trailblazing inventor in the realm of integrated circuits. His inventive spirit, coupled with his dedication to advancing technology, cements his legacy as a driving force behind cutting-edge semiconductor developments.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]