Raseong Kim

Title: Innovations by Inventor Raseong Kim in Resonator Technology

Introduction

Raseong Kim, an accomplished inventor based in Hillsboro, Oregon, has made significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, he is recognized for his innovative developments that enhance the performance of resonators used in various electronic applications.

Latest Patents

Two notable patents from Raseong Kim include the "Piezo-resistive Transistor Based Resonator with Anti-Ferrolectric Gate Dielectric" and the "Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric." The first patent describes a resonator that utilizes anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. This innovative use of AFE materials increases the strain and stress generated in the gate of the FinFET transistor. By boosting the capacitive drive with enhanced polarization, additional current drive is also achieved due to the piezoelectric response from the AFE material. Furthermore, the acoustic mode of the resonator is effectively isolated using phononic gratings, combined with a metal line above and vias to the body and dummy fins on either side, resulting in the formation of a Bragg reflector around the AFE-based transistor. The increased drive signal provided by the AFE leads to larger output signals and an expanded bandwidth.

In his second patent, the "Piezo-resistive Transistor Based Resonator with Ferroelectric Gate Dielectric," Kim employs ferroelectric (FE) materials in the gate of a transistor. Similar to the first patent, the use of FE materials amplifies the strain generated in the gate of the FinFET. The ferroelectric material changes shape in response to the electric field applied, generating acoustic waves as the polarization of the FE materials is switched. Again, the acoustic mode is isolated using phononic gratings, facilitated by the metal line above and vias to the body and dummy fins, forming a Bragg reflector around the FE-based transistor.

Career Highlights

Raseong Kim currently works at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing and innovation. His work focuses on exploring new materials and methods to enhance the capabilities of semiconductor devices, particularly in the realm of resonator technology.

Collaborations

Throughout his career, Raseong Kim has collaborated with notable colleagues, including Ian A Young and Uygar E Avci. Their collective expertise encompasses various aspects of semiconductor technology, allowing them to drive forward-thinking innovations in their field.

Conclusion

Raseong Kim's contributions to the development of resonators using advanced materials like anti-ferroelectric and ferroelectric dielectrics exemplify the innovative spirit in the semiconductor industry. His research not only enhances current technologies but also opens up new avenues for future applications. With his impressive portfolio of patents, Kim continues to be a valuable asset to the field of semiconductor innovation.