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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10263036 B1

PDFFull Text
Date of Patent:
Apr. 16, 2019

Filed:

Sep. 25, 2014

Strain assisted spin torque switching spin transfer torque memory

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Sasikanth Manipatruni, Hillsboro, OR (US);

Dmitri E. Nikonov, Beaverton, OR (US);

Asif Khan, Berkeley, CA (US);

Raseong Kim, Hillsboro, OR (US);

Tahir Ghani, Portland, OR (US);

Ian A. Young, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Green, Howard & Mughal LLP

Primary Examiner:

Thinh T Nguyen

Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 27/20 (2006.01); H01L 41/20 (2006.01); H01L 43/10 (2006.01); H01L 27/11507 (2017.01); H01L 27/11502 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01L 27/20 (2013.01); H01L 41/20 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 27/11502 (2013.01); H01L 27/11507 (2013.01); H01L 28/55 (2013.01);
Abstract

Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) having a free magnetic layer; a piezoelectric layer; and a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer. Described is a method, which comprises: exciting a piezoelectric layer with a voltage driven capacitive stimulus; and writing to a MTJ coupled to the piezoelectric layer via a strain assist layer. Described is also an apparatus which comprises: a transistor; a conductive strain transfer layer coupled to the transistor; and a MTJ device having a free magnetic layer coupled to the conductive strain transfer layer.

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