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For the Inventor, By the Inventor

Shanghai, China

Qiyang He

USPTO Granted Patents = 15

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 35(Granted Patents)


Location History:

  • Beijing, CN (2013 - 2016)
  • Shanghai, CN (2014 - 2018)

Company Filing History:

goldMedal8 out of 1,724 
 
Semiconductor Manufacturing International (Shanghai) Corporation
 patents
silverMedal7 out of 934 
 
Semiconductor Manufacturing International (Beijing) Corporation
 patents
bronzeMedal2 out of 78 
 
Semiconductor Manufacturing International Corp.
 patents
where one patent can have more than one assignee

Years Active: 2013-2018

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15 patents (USPTO):Explore Patents
1. 10090155 - Semiconductor device having interconnect structure (2018-10-02),
2. 9892921 - Interconnect structure and method for forming the same (2018-02-13),
3. 9633851 - Semiconductor device including small pitch patterns (2017-04-25),
4. 9541463 - Capacitive pressure sensors (2017-01-10),
5. 9349862 - Method of fabricating semiconductor devices (2016-05-24),
6. 9312328 - Small pitch patterns and fabrication method (2016-04-12),
7. 9207138 - Capacitive pressure sensors and fabrication methods thereof (2015-12-08),
8. 8952297 - Reaction apparatus for processing wafer, electrostatic chuck and wafer temperature control method (2015-02-10),
9. 8772148 - Metal gate transistors and fabrication method thereof (2014-07-08),
10. 8759179 - Method of forming gate pattern and semiconductor device (2014-06-24),
11. 8741744 - Method of forming a gate pattern and a semiconductor device (2014-06-03),
12. 8673707 - Method for forming metal gate (2014-03-18),
13. 8507379 - Semiconductor device and manufacturing method thereof (2013-08-13),
14. 8450167 - Method of fabricating semiconductor devices (2013-05-28),
15. 8450166 - Method of fabricating semiconductor devices (2013-05-28),

Title: Qiyang He: A Pioneer in Semiconductor Innovation

Introduction

Qiyang He, an accomplished inventor based in Shanghai, China, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 15 patents, his work has pushed the boundaries of innovation in the semiconductor industry. His groundbreaking inventions demonstrate a deep understanding of materials and engineering principles that are critical in developing advanced electronic devices.

Latest Patents

Among his latest patents, Qiyang He has developed innovative semiconductor devices featuring unique interconnect structures. His patents detail an advanced base that incorporates a substrate and an interlayer dielectric layer, designed with regions that facilitate efficient electrical connectivity. For instance, one of his patents describes a method for etching the interlayer dielectric layer to expose the substrate and form contact vias, which enhance the overall performance of semiconductor devices.

Career Highlights

Throughout his career, Qiyang He has been associated with leading companies in the semiconductor sector, including Semiconductor Manufacturing International Corporation in both Shanghai and Beijing. His expertise and innovative spirit have allowed him to carve out a niche in a highly competitive field. Qiyang's work has not only led to patents but has also advanced the methodologies used in semiconductor manufacturing.

Collaborations

Qiyang He has worked alongside esteemed colleagues such as Yiying Zhang and Chenglong Zhang. These collaborations have fostered an environment of shared creativity and innovation, significantly contributing to the development of cutting-edge semiconductor technologies.

Conclusion

As an inventor, Qiyang He exemplifies the spirit of innovation in the semiconductor industry. His contributions through various patents and collaboration with top professionals underline the importance of continuous advancement in technology. Qiyang's dedication to his work highlights the impact inventors can have on shaping the future of electronics and beyond.

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