The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 08, 2015

Filed:

Jan. 23, 2014
Applicants:

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventors:

Qiyang He, Shanghai, CN;

Chenglong Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0073 (2013.01); B81C 1/00698 (2013.01); B81B 2201/0264 (2013.01);
Abstract

A capacitive pressure sensor is provided. The capacitive pressure sensor includes a substrate; and a first electrode formed in one surface of the substrate and vertical to the surface of the substrate. The capacitive pressure sensor also includes a second electrode with a portion facing the first sub-electrode, a portion facing the second sub-electrode and a portion formed in the other surface of the substrate. Further, the capacitive pressure sensor includes a first chamber between the first electrode and the second electrode and a second chamber formed in the second electrode. Further, the pressure sensor also includes a first sealing layer formed on the second electrode; and a second sealing layer formed on the other surface of the substrate.


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