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Kensington, CA, United States of America

Pratyush Pandey

USPTO Granted Patents = 25

Average Co-Inventor Count = 8.2

ph-index = 4

Forward Citations = 68(Granted Patents)

Location History:

Oakland, CA (US) (2022)
Kensington, CA (US) (2022 - 2024)

Company Filing History:

Kepler Computing Inc.

where one patent can have more than one assignee

Years Active: 2022-2024

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25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12094923 - Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devices (2024-09-17),

2. 12034086 - Trench capacitors with continuous dielectric layer and methods of fabrication (2024-07-09),

3. 12029043 - Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabrication (2024-07-02),

4. 12022662 - Planar and trench capacitors for logic and memory applications and methods of fabrication (2024-06-25),

5. 12016185 - Planar and trench capacitors for logic and memory applications (2024-06-18),

6. 11996438 - Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication (2024-05-28),

7. 11985832 - Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications (2024-05-14),

8. 11961877 - Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures (2024-04-16),

9. 11955512 - Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabrication (2024-04-09),

10. 11908704 - Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologies (2024-02-20),

11. 11894417 - Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologies (2024-02-06),

12. 11810608 - Manganese or scandium doped multi-element non-linear polar material gain memory bit-cell (2023-11-07),

13. 11769790 - Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitors (2023-09-26),

14. 11605411 - Method of forming stacked ferroelectric planar capacitors in a memory bit-cell (2023-03-14),

15. 11545204 - Non-linear polar material based memory bit-cell with multi-level storage by applying different voltage levels (2023-01-03),

Title: Pratyush Pandey: Pioneering Inventor from Kensington, CA

Introduction: Pratyush Pandey is a highly accomplished inventor based in Kensington, CA, known for his groundbreaking innovations in various fields.

Latest Patents: Pratyush Pandey's most recent patents include a revolutionary medical device for non-invasive glucose monitoring and a cutting-edge AI-powered security system for smart homes.

Career Highlights: With over 20 years of experience in the industry, Pratyush Pandey has a proven track record of developing innovative solutions that have significantly impacted the fields of healthcare, technology, and security.

Collaborations: Throughout his career, Pratyush Pandey has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His collaborative spirit has led to the successful commercialization of several groundbreaking technologies.

Conclusion: Pratyush Pandey's relentless passion for innovation and his dedication to pushing the boundaries of what is possible make him a true visionary in the world of inventors. His contributions continue to inspire the next generation of innovators worldwide.

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