The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Feb. 03, 2022
Kepler Computing Inc., San Francisco, CA (US);
Niloy Mukherjee, San Ramon, CA (US);
Somilkumar J. Rathi, San Jose, CA (US);
Jason Y. Wu, Albany, CA (US);
Pratyush Pandey, Kensington, CA (US);
Zeying Ren, Albany, CA (US);
FNU Atiquzzaman, Orinda, CA (US);
Gabriel Antonio Paulius Velarde, San Leandro, CA (US);
Noriyuki Sato, Hillsboro, OR (US);
Mauricio Manfrini, Heverlee, BE;
Tanay Gosavi, Portland, OR (US);
Rajeev Kumar Dokania, Beaverton, OR (US);
Amrita Mathuriya, Portland, OR (US);
Ramamoorthy Ramesh, Moraga, CA (US);
Sasikanth Manipatruni, Portland, OR (US);
KEPLER COMPUTING INC., San Francisco, CA (US);
Abstract
A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.