PO-Yu Yang

Title: PO-Yu Yang: Semiconductor Device Inventor

Introduction

PO-Yu Yang is an inventor associated with Hsinchu City, Taiwan, and United Microelectronics Corporation. Yang’s patent work includes high electron mobility transistors (HEMTs), semiconductor devices used in high-frequency and high-power applications. The supplied information lists 6 patents.

Latest Patents

Two of Yang’s latest patents concern HEMT structures and fabrication methods.

“High Electron Mobility Transistor and Method for Forming the Same” describes a transistor with a substrate, channel layer, barrier layer, gate structure, gate spacer, and gate contact. The gate contact has portions on both sides of the spacer that directly contact the gate structure.

“High Electron Mobility Transistor and Method for Fabricating the Same” focuses on a manufacturing process. It describes forming a channel layer and barrier layer on a substrate, adding a p-type semiconductor layer and patterned passivation layer, and then forming a gate electrode. The electrode includes portions adjacent to opposite sides of the patterned passivation layer.

Career Highlights

Yang’s listed inventions address both device architecture and fabrication, with an emphasis on the gate structure and the layers surrounding it. This work reflects ongoing efforts to develop and manufacture semiconductor transistors.

Collaborations

Yang is associated with United Microelectronics Corporation, a semiconductor company. The supplied information does not specify particular co-inventors or other collaborators for the patents described here.

Conclusion

PO-Yu Yang’s listed patent work centers on high electron mobility transistors and methods for forming them, contributing to semiconductor device design and fabrication.