The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

May. 09, 2023
Applicant:

United Microelectronics Corp., Hsin-Chu City, TW;

Inventor:

PO-Yu Yang, Hsinchu City, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 62/116 (2025.01); H10D 64/017 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01);
Abstract

A semiconductor device includes a semiconductor substrate, a first semiconductor channel layer, a second semiconductor channel layer, and an isolation structure. The first semiconductor channel layer, the second semiconductor channel layer, and the isolation structure are disposed above the semiconductor substrate. The isolation structure includes a vertical portion, a first horizontal portion, and a second horizontal portion. The vertical portion is disposed between the first semiconductor channel layer and the second semiconductor channel layer in a horizontal direction. The first horizontal portion is disposed between the first semiconductor channel layer and the semiconductor substrate in a vertical direction. The second horizontal portion is disposed between the second semiconductor channel layer and the semiconductor substrate in the vertical direction. The first horizontal portion and the second horizontal portion are connected with the vertical portion.


Find Patent Forward Citations

Yang, PO-Yu. (2026). Semiconductor device and manufacturing method thereof (U.S. Patent No. 12575144). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575144

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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