Po-Ming Chen

Title: Po-Ming Chen: Innovator in Non-Volatile Memory Technology

Introduction

Po-Ming Chen is a distinguished inventor based in Shin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in non-volatile memory cells. With a total of 2 patents, his work has had a notable impact on the industry.

Latest Patents

Among his latest patents is the invention of fluorine doped non-volatile memory cells and methods for forming the same. This innovative non-volatile memory cell includes a substrate, a first oxide layer over the substrate, a floating gate over the first oxide layer, a second oxide layer over the floating gate, and a control gate at least partially over the second oxide layer. Notably, at least one of the first oxide layer and the second oxide layer comprises fluorine. Another significant patent is the wafer edge detector, which involves a method for detecting wafer flat shift. This apparatus features two sensors in a power supply circuit for wafer fabrication equipment, which detect a shift in wafer flat position from a desired position and subsequently shut off the wafer fabrication equipment.

Career Highlights

Po-Ming Chen is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., where he continues to advance his research and development efforts in semiconductor technology. His work has been instrumental in enhancing the efficiency and reliability of memory cells used in various applications.

Collaborations

Throughout his career, Po-Ming has collaborated with notable colleagues, including Jean-Hua Yuen and Ming-Ji Chiang. These collaborations have fostered innovation and contributed to the success of their projects.

Conclusion

Po-Ming Chen's contributions to the field of non-volatile memory technology exemplify his dedication to innovation. His patents and work at Taiwan Semiconductor Manufacturing Company Ltd. highlight his role as a key figure in advancing semiconductor technology.