Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Ming Chen

Wen-Chih Chiang

Shiuan-Jeng Lin

Hung-Lin Chen

Tza-Hao Wang

Jean-Hua Yuen

Ming-Ji Chiang

Ji-Shen Yang

A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.

Fluorine doped non-volatile memory cells and methods for forming the same

A method for detecting wafer flat shift, and an apparatus () having two sensors () and () in a power supply circuit () for wafer fabrication equipment, the sensors () and () detecting a shift in wafer flat position from a desired position and shutting off the wafer fabrication equipment.

Wafer edge detector

Growing community of inventors

Shin-Chu, Taiwan

Po-Ming Chen