The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Feb. 23, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hung-Lin Chen, Pingtung, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Wen-Chih Chiang, Hsinchu, TW;
Po-Ming Chen, Shin-Chu, TW;
Tza-Hao Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/3115 (2006.01); H01L 29/788 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28185 (2013.01); H01L 21/28158 (2013.01); H01L 21/3115 (2013.01); H01L 21/31155 (2013.01); H01L 21/823462 (2013.01); H01L 21/823857 (2013.01); H01L 29/40114 (2019.08); H01L 29/51 (2013.01); H01L 29/513 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/7884 (2013.01); H01L 21/266 (2013.01);
Abstract
A non-volatile memory cell is disclosed. In one example, the non-volatile memory cell includes: a substrate; a first oxide layer over the substrate; a floating gate over the first oxide layer; a second oxide layer over the floating gate; and a control gate at least partially over the second oxide layer. At least one of the first oxide layer and the second oxide layer comprises fluorine.