Hsinchu, Taiwan

Ping-Hsi Yang


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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2 patents (USPTO):Explore Patents

Title: Ping-Hsi Yang: Innovator in Semiconductor Technology

Introduction

Ping-Hsi Yang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving processes in semiconductor fabrication, which is crucial for the advancement of electronic devices.

Latest Patents

Yang's latest patents include innovative methods for defect monitoring in resist layers. One patent describes a method for detecting and monitoring defects in a resist material. This method involves forming a resist layer over a substrate, developing the resist layer, and washing it with a thinner wash solution to reveal negatively charged defects. After washing, an inspection is conducted to identify these defects. Another patent outlines an iterative rinse process for semiconductor fabrication. This process includes multiple rinse cycles, each with different resistivities, enhancing the cleaning efficiency of semiconductor substrates.

Career Highlights

Ping-Hsi Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to apply his innovative ideas in a practical setting, contributing to the development of advanced semiconductor technologies.

Collaborations

Yang has collaborated with esteemed colleagues such as Yung-Yao Lee and Che-Rong Laing. These collaborations have fostered a productive environment for innovation and have led to significant advancements in their field.

Conclusion

Ping-Hsi Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations.

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