The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2013

Filed:

Mar. 09, 2011
Applicants:

Yung-yao Lee, Zhubei, TW;

Wei-hong Chuang, Zhubei, TW;

Li-shiuan Chen, Kaohsiung, TW;

Ping-hsi Yang, Hsinchu, TW;

Inventors:

Yung-Yao Lee, Zhubei, TW;

Wei-Hong Chuang, Zhubei, TW;

Li-Shiuan Chen, Kaohsiung, TW;

Ping-Hsi Yang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

An iterative rinse for fabrication of semiconductor devices is described. The iterative rinse includes a plurality of rinse cycles, wherein each of the plurality of rinse cycles has a different resistivity. The plurality of rinse cycles may include a first rinse of a semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO), followed by a second rinse the semiconductor substrate with DI water and CO. The first rinse has a first resistivity; the second rinse has a second resistivity lower than the first resistivity.


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