Taiwan Semiconductor Manufacturing Comp. Ltd.

Ping-Hsi Yang

Yung-Yao Lee

Li-Kong Turn

Che-Rong Laing

Li-Shiuan Chen

Wei-Hong Chuang

Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.

Defect monitoring for resist layer

An iterative rinse for fabrication of semiconductor devices is described. The iterative rinse includes a plurality of rinse cycles, wherein each of the plurality of rinse cycles has a different resistivity. The plurality of rinse cycles may include a first rinse of a semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO), followed by a second rinse the semiconductor substrate with DI water and CO. The first rinse has a first resistivity; the second rinse has a second resistivity lower than the first resistivity.

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Hsinchu, Taiwan

Ping-Hsi Yang