Pi-Hung Chuang

Title: Innovations of Pi-Hung Chuang in Fin Field Effect Transistors

Introduction

Pi-Hung Chuang is a notable inventor based in Changhua County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of fin field effect transistors (FinFETs). With a total of 3 patents to his name, Chuang's work has advanced the efficiency and performance of electronic devices.

Latest Patents

Chuang's latest patents include a method for fabricating a fin structure for fin field effect transistors. This invention outlines a comprehensive process that begins with providing a substrate featuring a silicon fin and a single mask layer atop the fin. The method involves forming a stress buffer layer, performing nitridation treatment, and applying a flowable dielectric layer, followed by annealing and polishing. Another significant patent focuses on the fin structure itself, which includes a substrate with multiple silicon fins, each having a rounded top in cross-section. This design incorporates an isolation layer and a stress buffer layer, enhancing the overall functionality of the FinFET.

Career Highlights

Throughout his career, Pi-Hung Chuang has worked with prominent companies in the semiconductor industry, including United Microelectronics Corporation and Fujian Jinhua Integrated Circuit Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor fabrication and innovation.

Collaborations

Chuang has collaborated with several talented individuals in his field, including Hao Che Feng and Hung Jen Huang. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Pi-Hung Chuang's contributions to the field of fin field effect transistors demonstrate his innovative spirit and technical expertise. His patents reflect a commitment to advancing semiconductor technology, which plays a crucial role in modern electronics.