Inventors with similar research interests:
Location History:
- Fremont, CA (US) (1990 - 1992)
- Pleasonton, CA (US) (1995 - 2001)
- Plaesanton, CA (US) (2002)
- Morgan Hill, CA (US) (2006 - 2012)
- Pleasanton, CA (US) (1995 - 2015)
- Danville, CA (US) (2013 - 2018)
Company Filing History:
59 out of 85 
23 out of 38,002 
11 out of 2,602 
Years Active: 1990-2018
Areas of Expertise:
Title: The Innovative Journey of Petro Estakhri: Mastermind of Memory Devices
Introduction:
Petro Estakhri, a brilliant inventor based in Pleasanton, CA, has left an indelible mark in the realm of memory devices with his prolific work and a staggering 110 patents to his name.
Latest Patents:
Among his latest inventions is the 'Flash memory architecture with separate storage of overhead and user data', revolutionizing memory devices with dedicated data blocks for user data and overhead blocks for overhead data.
Another groundbreaking patent is the 'Method and apparatus for writing to a magnetic tunnel junction (MTJ) by applying incrementally increasing voltage level', showcasing his expertise in magnetoresistive random access memory technology.
Career Highlights:
Estakhri's exemplary career includes stints at renowned companies like Lexar Media, Inc., and Micron Technology Incorporated, where his innovative spirit and technical prowess were pivotal in driving advancements in memory technology.
Collaborations:
Throughout his career, Estakhri collaborated closely with esteemed colleagues such as Berhanu Iman and Mahmud M Assar, fostering a culture of innovation and collective achievement in the field of memory devices.
Conclusion:
Petro Estakhri's contributions to the world of memory devices stand as a testament to his ingenuity and dedication to pushing the boundaries of technological innovation. His legacy as a pioneering inventor continues to inspire future generations in the pursuit of cutting-edge advancements in memory technology.