The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Sep. 11, 2013
Applicant:
Avalanche Technology, Inc., Fremont, CA (US);
Inventors:
Ebrahim Abedifard, San Jose, CA (US);
Mahmood Mozaffari, Los Gatos, CA (US);
Petro Estakhri, Danville, CA (US);
Parviz Keshtbod, Los Altos Hills, CA (US);
Assignee:
Avalanche Technology, Inc., Fremont, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1677 (2013.01); G11C 11/16 (2013.01);
Abstract
A method of writing to a magneto tunnel junction (MTJ) includes writing data to the MTJ, reading the written data using a first reference MTJ and reading the written data using a second reference MTJ. Based on the reading steps and the result of the comparing step, setting a select bit to select the proper reference for future reads.
Quick Actions:
Abedifard, Ebrahim. (2014). Method of sensing data in magnetic random access memory with overlap of high and low resistance distributions (U.S. Patent No. 8891326). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8891326
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile