The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Nov. 20, 2009
Rajiv Yadav Ranjan, San Jose, CA (US);
Ebrahim Abedifard, Sunnyvale, CA (US);
Petro Estakhri, Pleasanton, CA (US);
Parviz Keshtbod, Los Altos Hills, CA (US);
Rajiv Yadav Ranjan, San Jose, CA (US);
Ebrahim Abedifard, Sunnyvale, CA (US);
Petro Estakhri, Pleasanton, CA (US);
Parviz Keshtbod, Los Altos Hills, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
An embodiment of the present invention includes a non-volatile storage unit comprising a first and second N-diffusion well separated by a distance of P-substrate. A first isolation layer is formed upon the first and second N-diffusion wells and the P-substrate. A nano-pillar charge trap layer is formed upon the first isolation layer and includes conductive nano-pillars interspersed between non-conducting regions. The storage unit further includes a second isolation layer formed upon the nano-pillar charge trap layer; and at least one word line formed upon the second isolation layer and above a region of nano-pillar charge trap layer. The nano-pillar charge trap layer is operative to trap charge upon application of a threshold voltage. Subsequently, the charge trap layer may be read to determine any charge stored in the non-volatile storage unit, where presence or absence of stored charge in the charge trap layer corresponds to a bit value.