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Pei-Hsun Wang

This inventor holds 48 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Parabellum Strategic Opportunities Fund LLC. Active years: 2020-2026.

USPTO Granted Patents = 48 (Patent Applications = 8)

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 64(Granted Patents)

Location History:

Hsinchu, TW (2021 - 2023)
Kaohsiung, TW (2020 - 2024)

Company Filing History:

46 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

2 out of 15

Parabellum Strategic Opportunities Fund LLC

patents

Years Active: 2020-2026

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Areas of Expertise:

Gate-All-Around Structure

FinFET Technology

Hybrid Channel Devices

Multi-Gate Devices

Vertical Nanostructures

Self-Aligned Contacts

Inner Spacers

Fabrication Methods

Air-Gap Spacers

Transistor Structures

Silicide FETs

Nanostructured Semiconductors

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12604515 - Semiconductor device structure with inner spacer layer (2026-04-14),

2. 12532506 - Gate-all-around structure and methods of forming the same (2026-01-20),

3. 12439638 - FET with wrap-around silicide and fabrication methods thereof (2025-10-07),

4. 12382655 - Transistors having vertical nanostructures (2025-08-05),

5. 12356645 - Self-aligned source/drain metal contact (2025-07-08),

6. 12243780 - Semiconductor device structure and method for forming the same (2025-03-04),

7. 12218226 - Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process (2025-02-04),

8. 12211900 - Hybrid channel semiconductor device and method (2025-01-28),

9. 12198986 - Dual channel gate all around transistor device and fabrication methods thereof (2025-01-14),

10. 12148836 - Gate-all-around structure and methods of forming the same (2024-11-19),

11. 12148673 - FinFET devices and methods of forming the same (2024-11-19),

12. 12119404 - Gate all around structure with additional silicon layer and method for forming the same (2024-10-15),

13. 12119270 - Hybrid source drain regions formed based on same fin and methods forming same (2024-10-15),

14. 11996483 - FET with wrap-around silicide and fabrication methods thereof (2024-05-28),

15. 11984361 - Multi-gate devices and method of fabricating the same (2024-05-14),

Title: Innovator Spotlight: Pei-Hsun Wang - Revolutionizing Semiconductor Devices

Introduction:

Pei-Hsun Wang, a prolific inventor based in Kaohsiung, Taiwan, is making waves in the field of semiconductor technology with his groundbreaking patents and innovative designs. With an impressive portfolio of 33 patents, Wang is at the forefront of shaping the future of the industry.

Latest Patents:

Wang's recent patents showcase his expertise and creativity in developing cutting-edge semiconductor devices. One such patent involves inner spacers for gate-all-around transistors, where he introduces a novel method of forming semiconductor devices with enhanced performance. Another patent focuses on semiconductor devices with air-gaps, demonstrating his prowess in introducing new features to improve the efficiency of these devices.

Career Highlights:

Currently employed at Taiwan Semiconductor Manufacturing Company Limited (TSMC), Wang plays a pivotal role in driving technological advancements within the organization. His contributions have been instrumental in establishing TSMC as a leader in the semiconductor industry, with a strong focus on innovation and quality.

Collaborations:

Alongside his solo achievements, Wang has collaborated with esteemed colleagues such as Chih-Hao Wang and Chun-Hsiung Lin. Together, they have synergized their expertise to develop groundbreaking technologies and push the boundaries of semiconductor design.

Conclusion:

In conclusion, Pei-Hsun Wang exemplifies the essence of innovation and ingenuity in the realm of semiconductor technology. His relentless pursuit of excellence and commitment to pushing the boundaries of what is possible make him a driving force in the industry. As he continues to spearhead new developments and patents, the future of semiconductor technology looks brighter than ever.

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