Poughquag, NY, United States of America

Paul Wensley


Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 32(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2002)
  • Poughquag, NY (US) (2002 - 2003)
  • Leics, GB (2005)

Company Filing History:


Years Active: 2002-2005

Loading Chart...
5 patents (USPTO):

Title: Paul Wensley: Innovator in Memory Device Technology

Introduction

Paul Wensley is a notable inventor based in Poughquag, NY (US). He has made significant contributions to the field of memory devices, holding a total of 5 patents. His work focuses on innovative methods for enhancing semiconductor technology.

Latest Patents

Wensley's latest patents include a selective silicidation scheme for memory devices. This invention involves a method of manufacturing memory devices where a silicide material is selectively formed over active regions. Additionally, it allows for the formation of silicide material on the top surface of wordlines adjacent to these active regions. Another notable patent is related to strap resistance using selective oxidation to cap DT poly before STI etch. This method provides shallow trench isolation for semiconductor wafers, ensuring low resistance in element regions.

Career Highlights

Throughout his career, Paul Wensley has worked with prominent companies, including Infineon Technologies AG. His expertise in semiconductor technology has positioned him as a key player in the industry.

Collaborations

Wensley has collaborated with notable professionals in his field, including Martin Commons and Tobias Mono. Their combined efforts have contributed to advancements in memory device technology.

Conclusion

Paul Wensley is a distinguished inventor whose work in memory devices has led to several important patents. His innovative approaches continue to influence the semiconductor industry.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…