The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Aug. 13, 2001
Paul Wensley, Poughquag, NY (US);
Martin Commons, Stormville, NY (US);
Tobias Mono, Dresden, DE;
Veit Klee, Pleasant Valley, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method of providing shallow trench ( ) isolation for a semiconductor wafer ( ). Trenches ( ) are formed within a first semiconductor material ( ) and a pad nitride ( ), leaving a portion of first semiconductor material ( ) and pad nitride ( ) in a region between the trenches ( ). A second semiconductor material ( ) is deposited over the trenches ( ) to fill the trenches ( ) to a height below the first semiconductor material ( ) top surface. A first insulator ( ) is selectively formed over the second semiconductor material ( ). The pad nitride ( ) and a portion of the first semiconductor material ( ) between the trenches ( ) are removed to isolate element regions of the wafer ( ) and form straps ( ) having a low resistance.