The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2005
Filed:
Feb. 28, 2003
Applicants:
Paul Wensley, Leics, GB;
Mohammed Fazil Fayaz, Pleasantville, NY (US);
Martin Commons, Glen Allen, VA (US);
Inventors:
Paul Wensley, Leics, GB;
Mohammed Fazil Fayaz, Pleasantville, NY (US);
Martin Commons, Glen Allen, VA (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 218242 ; H01L 2144 ;
U.S. Cl.
CPC ...
Abstract
A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top surface of wordlines adjacent the active regions during the selective silicidation process. A single nitride insulating layer is used, and portions of the workpiece are covered with photoresist during the formation of the silicide material.