The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2002
Filed:
Oct. 19, 1999
Applicant:
Inventors:
Chuan Lin, Poughquag, NY (US);
Thomas Schafbauer, Wappingers Falls, NY (US);
Paul Wensley, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/176 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/176 ; H01L 2/1425 ;
Abstract
A method (see e.g., FIG. ) of fabricating a semiconductor device includes forming a trench in a semiconductor body . A dielectric layer is formed within the trench . Dielectric layer lines the sidewall and, possibly, the bottom portions of the trench in a manner where the thickness of the dielectric at the sidewall is greater than the thickness of the dielectric at the bottom. A dopant can then be implanted into the semiconductor body beneath the trench.