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For the Inventor, By the Inventor

Palo Alto, CA, United States of America

Patrik Svensson

This inventor holds 16 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Nanoelectronics. Top assignees: Qunano Ab, Glo Ab. Active years: 2011-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Patrik Svensson. Retrieved from https://idiyas.com/inventor/patrik-svensson

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16 

% Patents Active = 50.0


Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 245(Granted Patents)


Location History:

  • Lund, SE (2011 - 2016)
  • Palo Alto, CA (US) (2013 - 2018)

Company Filing History:

goldMedal9 out of 57 
 
Qunano Ab
 patents
silverMedal7 out of 84 
 
Glo Ab
 patents

Years Active: 2011-2018

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Areas of Expertise:
III-Nitride LED
Nanowire Structures
Nanoelectronic Structure
Strain Modified Surface
Silicon Substrates
Coalesced Nanowires
Method of Manufacturing
III-V Compound Semiconductors
16 patents (USPTO):Explore Patents
1. 10026866 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2018-07-17),
2. 9761757 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2017-09-12),
3. 9570651 - Coalesced nanowire structures with interstitial voids and method for manufacturing the same (2017-02-14),
4. 9318655 - Elevated LED (2016-04-19),
5. 9281442 - III-nitride nanowire LED with strain modified surface active region and method of making thereof (2016-03-08),
6. 9096429 - Nanoelectronic structure and method of producing such (2015-08-04),
7. 9035278 - Coalesced nanowire structures with interstitial voids and method for manufacturing the same (2015-05-19),
8. 9012887 - Nanowire growth on dissimilar material (2015-04-21),
9. 8901534 - Coalesced nanowire structures with interstitial voids and method for manufacturing the same (2014-12-02),
10. 8796119 - Nanoelectronic structure and method of producing such (2014-08-05),
11. 8455857 - Nanoelectronic structure and method of producing such (2013-06-04),
12. 8350249 - Coalesced nanowire structures with interstitial voids and method for manufacturing the same (2013-01-08),
13. 8227817 - Elevated LED (2012-07-24),
14. 8084337 - Growth of III-V compound semiconductor nanowires on silicon substrates (2011-12-27),
15. 8067299 - Nanoelectronic structure and method of producing such (2011-11-29),

Title: Patrik Svensson: Pioneering Innovations in LED Technology

Introduction:

Patrik Svensson, a remarkable inventor based in Palo Alto, CA, is renowned for his relentless pursuit of innovation in the field of technology. With a passion for creating a better future through his groundbreaking inventions, Svensson has established himself as a true pioneer in the world of LED technology and beyond.

Latest Patents:

Svensson's latest patents showcase his expertise and dedication to advancing the field of LED technology. One of his notable inventions is the "III-nitride nanowire LED with strain modified surface active region and method of making thereof." This patent describes a light emitting diode (LED) device that includes a semiconductor nanowire core and an In(Al)GaN active region quantum well shell, designed to enhance the performance and efficiency of LED devices.

Career Highlights:

With an impressive portfolio of 16 patents to his name, Patrik Svensson has made significant contributions to the field of LED technology. Throughout his career, he has worked with leading companies such as Qunano Ab and Glo Ab, where he has played a key role in developing cutting-edge innovations in the realm of semiconductor technology.

Collaborations:

Svensson's collaborations with esteemed coworkers such as Lars Samuelson and Jonas Ohlsson have been instrumental in shaping the trajectory of his innovative endeavors. Together, they have explored new frontiers in LED technology and pushed the boundaries of what is possible in the field of semiconductor research.

Conclusion:

In conclusion, Patrik Svensson's unwavering commitment to innovation and his visionary approach to invention have solidified his position as a trailblazer in the world of LED technology. His pioneering spirit and dedication to creating a brighter future through his inventions continue to inspire and drive progress in the realm of technology and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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