The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2016

Filed:

Dec. 15, 2014
Applicant:

Glo Ab, Lund, SE;

Inventors:

Linda Romano, Sunnyvale, CA (US);

Sungsoo Yi, Sunnyvale, CA (US);

Patrik Svensson, Palo Alto, CA (US);

Nathan Gardner, Sunnyvale, CA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 27/15 (2013.01); H01L 27/153 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the same shell. The active region quantum well shell has a non-uniform surface profile having at least 3 peaks. Each of the at least 3 peaks is separated from an adjacent one of the at least 3 peaks by a valley, and each of the at least 3 peaks extends at least 2 nm in a radial direction away from an adjacent valley.


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