The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Dec. 05, 2012
Applicant:
Glo Ab, Lund, SE;
Inventor:
Patrik Svensson, Palo Alto, CA (US);
Assignee:
GLO AB, Lund, SE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 29/41 (2006.01); H01L 29/06 (2006.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/18 (2010.01); H01L 33/08 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 29/413 (2013.01); H01L 29/068 (2013.01); H01L 33/0062 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 29/0676 (2013.01); H01L 33/08 (2013.01); Y10S 977/762 (2013.01);
Abstract
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.