The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Oct. 24, 2011
Lars Samuelson, Malmö, SE;
Jonas Ohlsson, Malmö, SE;
Thomas Mårtensson, Lund, SE;
Patrik Svensson, Palo Alto, CA (US);
Lars Samuelson, Malmö, SE;
Jonas Ohlsson, Malmö, SE;
Thomas Mårtensson, Lund, SE;
Patrik Svensson, Palo Alto, CA (US);
Qunano AB, Lund, SE;
Abstract
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of the nanowire, of providing group III or group V atoms to a (111) surface of the Si substrate to provide a group III or group V 5 surface termination (4). A nanostructured device including a plurality of aligned III-V semiconductor nanowires (2) grown on, and protruding from, a (111) surface of a Si substrate (3) in an ordered pattern in compliance with a predetermined device layout is also presented.