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For the Inventor, By the Inventor

Washington, DC, United States of America

Patrick Bruckner Shea

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.0

ph-index = 4

Forward Citations = 65(Granted Patents)


Location History:

  • Washington, DC (US) (2012 - 2017)
  • Alexandria, VA (US) (2016 - 2022)

Company Filing History:

goldMedal12 out of 3,381 
 
Northrop Grumman Systems Corporation
 patents

Years Active: 2012-2024

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12 patents (USPTO):
1. 12150316 - Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS (2024-11-19),
2. 11522010 - Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS (2022-12-06),
3. 10069093 - Self-assembled monolayer overlying a carbon nanotube substrate (2018-09-04),
4. 9812445 - Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer (2017-11-07),
5. 9748506 - Self-assembled monolayer overlying a carbon nanotube substrate (2017-08-29),
6. 9646259 - Quantum bits and methods of forming the same (2017-05-09),
7. 9355362 - Quantum bits and method of forming the same (2016-05-31),
8. 9142546 - Method of making bipolar junction transistor by forming base epitaxy region on etched opening in DARC layer (2015-09-22),
9. 8822815 - Photovoltaic silicon solar cells (2014-09-02),
10. 8735326 - Methods of forming superconductor circuits (2014-05-27),
11. 8409950 - Method for integrating SONOS non-volatile memory into a sub-90 nm standard CMOS foundry process flow (2013-04-02),
12. 8258027 - Method for integrating SONOS non-volatile memory into a standard CMOS foundry process flow (2012-09-04),

Title: Innovator Spotlight: Patrick Bruckner Shea

Introduction

Patrick Bruckner Shea is a prominent inventor based in Washington, DC, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 11 patents, Shea's work focuses primarily on advancements in high-speed BiCMOS processes and semiconductor devices.

Latest Patents

Among Shea's latest patents is a groundbreaking method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS. This innovative approach involves creating a base structure with BiCMOS circuitry on a semiconductor substrate and forming a dielectric contact window layer featuring metal through-plugs that contact the BiCMOS circuitry. The construction of a phase change switch (PCS) on this layer enables heat-controlled switching functionalities, which represents a significant leap in semiconductor efficiency.

Another notable patent centers around a self-assembled monolayer overlying a carbon nanotube substrate. This invention includes a semiconductor device that integrates a carbon nanotube substrate with a self-assembled monolayer and a gate oxide. The self-assembled monolayer establishes a critical interface between the carbon nanotube substrate and the gate oxide, enhancing device performance and reliability.

Career Highlights

Patrick Bruckner Shea is currently employed at Northrop Grumman Systems Corporation, where he continues to push the boundaries of innovation within the technology sector. His career has been marked by a continuous pursuit of excellence and efficiency in the field of semiconductor technology.

Collaborations

Throughout his career, Shea has collaborated with talented individuals, including Dennis Allen Adams and Michael Rennie. These partnerships have fostered a collaborative environment that encourages creative problem-solving and the advancement of pioneering technologies.

Conclusion

Patrick Bruckner Shea stands out as a significant figure in the realm of innovation and invention, with a strong focus on improving semiconductor technologies. His patents not only reflect his skills as an inventor but also his commitment to enhancing the capabilities of modern technology. As the industry evolves, Shea's contributions will undoubtedly play a crucial role in shaping the future of electronic systems.

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