The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 27, 2014

Filed:

May. 19, 2010
Applicants:

Erica Folk, Linthicum Heights, MD (US);

Patrick B. Shea, Washington, DC (US);

Andrew C. Loyd, Monkton, MD (US);

Inventors:

Erica Folk, Linthicum Heights, MD (US);

Patrick B. Shea, Washington, DC (US);

Andrew C. Loyd, Monkton, MD (US);

Assignee:

Northrop Grumman Systems Corporation, Falls Church, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming superconducting devices are disclosed. In one embodiment, the method can comprise depositing a protective barrier layer over a superconducting material layer, curing the protective barrier layer, depositing a photoresist material layer over the protective barrier layer and irradiating and developing the photoresist material layer to form an opening pattern in the photoresist material layer. The method can further comprise etching the protective barrier layer to form openings in the protective barrier layer based on the opening pattern, etching the superconductor material layer based on the openings in the protective barrier layer to form openings in the superconductor material layer that define a first set of superconductor material raised portins and stripping the photoresist material layer and the protective barrier layer.


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