Kanagawa-ken, Japan

Osamu Nagao


Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • Yokkaichi, JP (2008)
  • Yokohama, JP (2012 - 2014)
  • Kanagawa-ken, JP (2012 - 2015)

Company Filing History:


Years Active: 2008-2015

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7 patents (USPTO):Explore Patents

Title: Osamu Nagao: Innovator in Semiconductor Technology

Introduction

Osamu Nagao is a prominent inventor based in Kanagawa-ken, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing memory devices and improving data storage methods.

Latest Patents

Nagao's latest patents include a semiconductor memory device and a method for writing therein. This invention features a semiconductor memory device that comprises multiple blocks in a memory cell, with each block serving as an erasure unit of data. The device includes a controller that manages data searching and writing flags to indicate the state of the data. Another notable patent is for a semiconductor storage device, which incorporates memory cells and a sense amplifier. This device performs a write sequence that ensures data integrity through a series of write loops and verification stages.

Career Highlights

Osamu Nagao is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has positioned him as a key player in the development of advanced semiconductor solutions. His innovative approaches have contributed to the company's reputation for excellence in technology.

Collaborations

Nagao has collaborated with notable colleagues, including Hitoshi Shiga and Ayako Yamano. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Osamu Nagao's contributions to semiconductor technology exemplify his dedication to innovation and excellence. His patents reflect a commitment to advancing memory devices and improving data storage methods.

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