The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Feb. 20, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Rieko Funatsuki, Kamakura, JP;

Osamu Nagao, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/34 (2006.01); G11C 16/28 (2006.01); G11C 7/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/28 (2013.01); G11C 7/14 (2013.01);
Abstract

A memory includes memory cells and a sense amplifier including a sense node that transmits a voltage according to a current flowing in one of the memory cells and detects logic of data based on the voltage of the sense node. A write sequence of writing data in a selected cell is performed by repeating write loops each including a write stage of writing data in the selected cell and a verify read stage of verifying that the data has been written in the selected cell by performing discharge from the sense node through the selected cell. The sense amplifier changes, according to a logic of data detected at the verify read stage in a first write loop, a period of discharge from the sense node to the selected cell at the verify read stage in a second write loop following the first write loop.


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