The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2012

Filed:

Mar. 17, 2010
Applicants:

Osamu Nagao, Kanagawa-ken, JP;

Hitoshi Shiga, Kanagawa-ken, JP;

Inventors:

Osamu Nagao, Kanagawa-ken, JP;

Hitoshi Shiga, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile semiconductor memory device according to one aspect of the present invention includes: a memory cell array provided to perform programming in page units; and a control circuit provided to control the programming. The control circuit includes: means that performs a first detection for memory cells in a part provided as a unit smaller than a page, concurrently with programming to memory cells to be written in a page; and means that subjects the memory cells in the page to a second detection that takes into consideration a failure relief due to a redundant region, when the number of memory cells of unwritten state in the part as detected by the first detection becomes equal to or less than a first constant, and that ends the program operation when the number of memory cells of unwritten state in the page becomes equal to or less than a second constant.


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