Dresden, Germany

Oliver Genz


Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 91(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2000 - 2002)
  • Dresden, DE (2003 - 2006)
  • Saxony, DE (2006)

Company Filing History:


Years Active: 2000-2006

where 'Filed Patents' based on already Granted Patents

11 patents (USPTO):

Title: Oliver Genz: Innovator in Semiconductor Technology

Introduction

Oliver Genz is a prominent inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His innovative methods have advanced the production and structuring of semiconductor materials.

Latest Patents

Among his latest patents is a method for the production of a semiconductor structure. This method involves preparing a semiconductor substrate and generating multiple masking layers on its surface. The process includes forming windows in the upper masking layer and structuring the middle and lower layers accordingly. Another notable patent is a method for introducing structures with varying dimensions into a substrate. This process simplifies the lithography required by utilizing a layer stack that stores information about the dimensions of different structures, allowing for efficient etching of both deep and shallow structures.

Career Highlights

Oliver Genz has worked with leading companies in the technology sector, including Infineon Technologies AG and Siemens Aktiengesellschaft. His experience in these organizations has contributed to his expertise in semiconductor innovations.

Collaborations

Throughout his career, Oliver has collaborated with notable colleagues such as Alexander Michaelis and Ulrich Mantz. These partnerships have fostered a collaborative environment that enhances innovation in semiconductor technology.

Conclusion

Oliver Genz is a key figure in the semiconductor industry, with a strong portfolio of patents that reflect his innovative spirit. His work continues to influence the development of advanced semiconductor structures and processes.

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