The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Jun. 08, 1999
Applicant:
Inventors:
Oliver Genz, Wappingers Falls, NY (US);
Alexander Michaelis, Wappingers Falls, NY (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/18242 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/18242 ;
Abstract
A method for forming a valve metal oxide for semiconductor fabrication in accordance with the present invention is disclosed and claimed. The method includes the steps of providing a semiconductor wafer, depositing a valve metal on the wafer, placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the valve metal to form a metal oxide when a potential difference is provided between the valve metal and the solution and processing the wafer using the metal oxide layer.