Matsumoto, Japan

Norihiro Komiyama

This inventor holds 7 USPTO granted patents and 8 published patent applications. Top assignees: Fuji Electric Co., Ltd., Fuji Electric., Ltd.. Active years: 2023-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Norihiro Komiyama. Retrieved from https://idiyas.com/inventor/norihiro-komiyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2026

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7 patents (USPTO):Explore Patents

Title: Norihiro Komiyama: Innovator in Semiconductor Technology

Introduction

Norihiro Komiyama is a prominent inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is for a semiconductor device that includes a semiconductor substrate with a drift region of a first conductivity type. This device features a first main terminal above the upper surface and a second main terminal below the lower surface. A control terminal is included to manage the current flow between the two main terminals. Notably, a buffer region with a higher doping concentration than the drift region is provided, which improves the device's performance. The patent also describes a C-V characteristic that indicates a peak inter-terminal capacitance at power supply voltages of 500 V or more.

Another significant patent by Komiyama is for a semiconductor device and its fabrication method, which boasts improved breaking withstand capability. This device consists of a drift region of a first conductivity type and a base region of a second conductivity type. It features a plurality of trench portions arranged in a specific direction on the semiconductor substrate's front surface. The design includes a trench contact and a contact layer with a higher doping concentration than the base region, ensuring effective contact and enhanced performance.

Career Highlights

Norihiro Komiyama has built a successful career at Fuji Electric Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Throughout his career, Komiyama has collaborated with notable colleagues, including Yuichi Harada and Seiji Noguchi. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Norihiro Komiyama is a key figure in semiconductor innovation, with a focus on improving device performance and reliability. His contributions through patents and collaborations have significantly impacted the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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