Company Filing History:

14 out of 39,228

Fujitsu Corporation

where one patent can have more than one assignee

Years Active: 1985-1998

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5828106 - ESD tolerated SOI device (1998-10-27),

2. 5731237 - Method of producing an EPROM with a trench insulating layer (1998-03-24),

3. 5589410 - An integrated semiconductor device having a buried semiconductor layer (1996-12-31),

4. 5551014 - Method and apparatus for designing integrated circuits according to (1996-08-27),

5. 5512516 - Contact structure for connecting an electrode to a semiconductor device (1996-04-30),

6. 5498891 - EPROM with trench in thick field oxide (1996-03-12),

7. 5384485 - Contact structure for connecting an electrode to a semiconductor (1995-01-24),

8. 5362981 - Integrated semiconductor device having a buried semiconductor layer and (1994-11-08),

9. 5258645 - Semiconductor device having MOS transistor and a sidewall with a double (1993-11-02),

10. 5238857 - Method of fabricating a metal-oxide-semiconductor device having a (1993-08-24),

11. 5079746 - Semiconductor memory circuit (1992-01-07),

12. 5075249 - Method of making a BIC memory cell having contact openings with straight (1991-12-24),

13. 4782466 - Programmable semiconductor read only memory device (1988-11-01),

14. 4503315 - Semiconductor device with fuse (1985-03-05),

Title: Noriaki Sato: Innovator in Semiconductor Technology

Introduction

Noriaki Sato is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations is the "ESD Tolerated SOI Device." This invention features a semiconductor-on-insulator (SOI) type semiconductor device designed to improve electrostatic discharge (ESD) tolerance. It includes a semiconductor layer on an insulating support substrate, with voltage supply lines and low resistivity semiconductor regions that form a capacitor. Another notable patent is the "Method of Producing an EPROM with a Trench Insulating Layer." This EPROM design allows for miniaturization of the isolation region without creating a parasitic transistor, incorporating a trench insulating layer that is self-aligned with the floating gate.

Career Highlights

Noriaki Sato has worked with leading companies in the technology sector, including Fujitsu Corporation and Fujitsu VLSI Limited. His experience in these organizations has allowed him to develop cutting-edge semiconductor technologies that have had a lasting impact on the industry.

Collaborations

Throughout his career, Noriaki has collaborated with notable professionals such as Fumitake Mieno and Kenji Nishida. These partnerships have contributed to the advancement of semiconductor innovations and have fostered a collaborative environment for research and development.

Conclusion

Noriaki Sato's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices, ensuring a lasting legacy in the industry.

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