The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1993
Filed:
Sep. 04, 1992
Noriaki Sato, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device including a semiconductor substrate with a P-type well formed in the semiconductor substrate and a gate insulator layer formed on the semiconductor substrate. N-type diffusion regions are formed in the P-type well on both sides of the gate insulator layer. A gate electrode is formed on the gate insulator layer, where the gate electrode has top and side surfaces. The gate electrode and the N-type diffusion regions respectively form gate, source and drain of a N-channel MOS transistor. An insulating layer covers a portion of the N-type diffusion regions, the side surfaces of the gate electrode and at least a portion of the top surface of the gate electrode. The side wall layer which is made of an insulating material is formed on the insulating layer to provide a smooth coverage around the side of the gate electrode and aligns with an edge of said insulating layer which stops covering the N-type diffusion regions.