Location History:
- Gunma, JP (1993 - 1995)
- Tokyo, JP (1995 - 1997)
- Annaka, JP (1993 - 1998)
- Gunma-ken, JP (1996 - 1998)
Company Filing History:
Years Active: 1993-1998
Title: Nobuyoshi Fujimaki: Innovator in Semiconductor Technology
Introduction
Nobuyoshi Fujimaki is a prominent inventor based in Annaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His work focuses on improving the quality and efficiency of silicon single crystals, which are essential for modern electronic devices.
Latest Patents
Fujimaki's latest patents include innovative methods for heat treatment of silicon single crystals. One notable invention is a method for heat treatment of a silicon single crystal grown by the Czochralski method at a pull speed of not less than 0.8 mm/min. This method involves heat-treating a wafer cut from the silicon single crystal at temperatures ranging from 1,150°C to 1,280°C. The result is a silicon wafer with excellent oxide film dielectric breakdown voltage characteristics due to the elimination of crystal defects. This invention ensures the production of large-scale integrated circuits (LSI) with high yield. Another significant patent is related to a semiconductor crystal packaging device, which further enhances the efficiency of semiconductor manufacturing.
Career Highlights
Fujimaki is currently associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in semiconductor production, making him a key figure in this field.
Collaborations
Fujimaki has collaborated with notable colleagues such as Izumi Fusegawa and Hirotoshi Yamagishi. Their combined expertise has contributed to the development of innovative solutions in semiconductor technology.
Conclusion
Nobuyoshi Fujimaki's contributions to semiconductor technology through his patents and collaborations have significantly impacted the industry. His innovative methods continue to enhance the quality and efficiency of silicon single crystals, paving the way for advancements in electronic devices.