The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 1997
Filed:
Sep. 27, 1995
Nobuyoshi Fujimaki, Annaka, JP;
Shin-Etsu Handotai Co., Ltd, Tokyo, JP;
Abstract
A method of evaluating a MIS-type semiconductor device which comprises an insulative layer(s) and a conductive layer (s) formed one after another on a semiconductor substrate wherein: using a sample with an interface trapped charge density of 1.times.10.sup.10 /cm.sup.2 .multidot.eV or less and a mobile ionic charge density of 3.times.10.sup.10 /cm.sup.2 or less in said insulative layer, said MIS-type semiconductor device is treated by applying a positive or negative voltage in the range of 1-5 MV/cm between said semiconductor substrate and said conductive layer at a temperature of 100.degree.-300.degree. C. and maintaining this voltage for 1-60 minutes (hereafter referred to as 'BT treatment'); before and after said BT treatment, the capacitance-voltage characteristics (hereafter referred to as 'C-V characteristics) of said MIS-type semiconductor device are measured at room temperature; and the carrier trap density of said insulative layer is determined based on the shift of the flat band voltage of said C-V characteristics from before to after said BT treatment.