The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1993
Filed:
Mar. 17, 1992
Tetsuhiro Oda, Takefu, JP;
Izumi Fusegawa, Annaka, JP;
Hirotoshi Yamagishi, Annaka, JP;
Atsushi Iwasaki, Takefu, JP;
Akiho Maeda, Takefu, JP;
Shinobu Takeyasu, Fukui, JP;
Nobuyoshi Fujimaki, Annaka, JP;
Yukio Karasawa, Takasaki, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.