Hirotoshi Yamagishi

This inventor holds 37 USPTO granted patents, primarily in Single Crystal Growth. Top assignees: Shin-Etsu Handotai Co., Ltd., Super Silicon Crystal Research Institute Corp.. Active years: 1990-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirotoshi Yamagishi. Retrieved from https://idiyas.com/inventor/hirotoshi-yamagishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 37

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 10

Forward Citations = 317(Granted Patents)

Location History:

Gunma, JP (1990 - 1996)
Gunma-ken, JP (1996 - 2000)
Annaka, JP (1991 - 2002)

Company Filing History:

35 out of 1,099

Shin-Etsu Handotai Co., Ltd.

patents

2 out of 20

Super Silicon Crystal Research Institute Corp.

patents

Years Active: 1990-2002

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Areas of Expertise:

Single Crystal Growth

Silicon Single Crystal

Defect Density

Heat Treatment

Czochralski Method

Float-Zone Method

Electrical Properties

High-Frequency Induction Heater

Crucible Technology

Semiconductor Manufacturing

Quality Testing

Granular Raw Material

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6372040 - Single crystal growth apparatus and single crystal growth method (2002-04-16),

2. 6120749 - Silicon single crystal with no crystal defect in peripheral part of (2000-09-19),

3. 6117234 - Single crystal growing apparatus and single crystal growing method (2000-09-12),

4. 6113686 - Single crystal growing method and apparatus (2000-09-05),

5. 5980630 - Manufacturing method of single crystal and apparatus of manufacturing (1999-11-09),

6. 5871583 - Apparatus for producing silicon single crystal (1999-02-16),

7. 5843229 - Crystal holding apparatus (1998-12-01),

8. 5834322 - Heat treatment of Si single crystal (1998-11-10),

9. 5792258 - High-frequency induction heater and method of producing semiconductor (1998-08-11),

10. 5792255 - Manufacturing method of single crystal (1998-08-11),

11. 5788718 - Apparatus and a method for growing a single crystal (1998-08-04),

12. 5735951 - Single crystal pulling apparatus (1998-04-07),

13. 5728211 - Silicon single crystal with low defect density and method of producing (1998-03-17),

14. 5720809 - Crucible for pulling silicon single crystal (1998-02-24),

15. 5688321 - Apparatus for producing a silicon single crystal by a float-zone method (1997-11-18),

Title: Hirotoshi Yamagishi: Innovator in Crystal Growth Technology

Introduction: Hirotoshi Yamagishi, based in Annaka, Japan, is a renowned inventor with an impressive portfolio of 37 patents. His contributions to the field of crystal growth have significantly advanced the development of silicon single crystals, enhancing their quality and performance in various applications.

Latest Patents: Among Yamagishi's latest innovations are a single crystal growth apparatus and a method for growing silicon single crystals with no defects in the peripheral region. These inventions highlight his commitment to improving crystal growth techniques, which are crucial for the semiconductor industry.

Career Highlights: Yamagishi has made notable advancements while working for prestigious companies, including Shin-Etsu Handotai Co., Ltd. and Super Silicon Crystal Research Institute Corporation. His expertise and innovative spirit have solidified his standing as a key player in the development of high-quality silicon materials.

Collaborations: Throughout his career, Yamagishi has collaborated with talented professionals such as Izumi Fusegawa and Kiyotaka Takano. These partnerships have fostered a dynamic environment for innovation and have contributed to the success of his groundbreaking projects.

Conclusion: Hirotoshi Yamagishi's dedication to innovation in crystal growth technology exemplifies the importance of vision and collaboration in driving advancements. With his extensive patent portfolio and contributions to the industry, he continues to be a significant influence in the realm of material science and semiconductor technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]